Title: Gallium nitride nanowires grown by low pressure chemical vapour deposition on silicon substrate

Authors: A. Olivier; H. Wang; A. Koke; D. Baillargeat

Addresses: CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553, Singapore ' CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553, Singapore; School of Electrical and Electronics Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, 639798, Singapore ' CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553, Singapore ' CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, 637553, Singapore

Abstract: In this work, the synthesis of GaN nanowires (NWs) using a low pressure chemical vapour deposition (LPCVD) system is performed. The growth of GaN nanowires via a catalyst-assisted process is carried out on silicon (Si) by reaction of metallic gallium (Ga) with ammonia (NH3) gas. The effects of temperature and pressure on the growth of GaN NWs focusing on the low pressure regime (pressure ranging from 250 mTorr to 600 mTorr) are explored. Scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy are performed to investigate the morphology and the quality of the nanowires. High growth yield of GaN NWs with small diameter (∼20 nm) was demonstrated at a temperature of 700°C and a pressure of 250 mTorr, which is faster than other growth methods.

Keywords: gallium nitride; GaN nanowires; low pressure CVD; chemical vapour deposition; silicon substrate; nanoelectronics; nanotechnology; temperature; pressure.

DOI: 10.1504/IJNT.2014.059826

International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.243 - 253

Available online: 14 Mar 2014 *

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