Title: Simulation study of dimensional effect on bipolar resistive random access memory

Authors: Liu Kai; Zhang Kailiang; Wang Fang; Zhao Jinshi; Wei Jun

Addresses: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China ' School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China ' School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China; Tianjin University, Tianjin 300072, China ' School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China ' Singapore Institute of Manufacturing Technology, A-star 71 Nanyang Drive, 638075, Singapore

Abstract: The dependency of the RRAM device electrical parameters such as set voltage, reset current and resistance on the RRAM cell dimensional scalability is investigated with Monte Carlo simulation to optimise the power consumption of bipolar RRAM. It is found in the simulation that the switching process in bipolar RRAM is related to the cell dimension in the region of 10 nm to 100 nm in terms of its horizontal length. The suppressing effect of existing conducting filament is also discussed. With optimal cell size sufficient initial resistance and a low forming voltage will be achieved, accelerating the feasibility of the high-density low-power RRAM.

Keywords: bipolar RRAM; resistive RAM; random access memory; power consumption; electric parameters; set voltage; reset current; resistance; Monte Carlo simulation; nanoelectronics; nanotechnology.

DOI: 10.1504/IJNT.2014.059813

International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.97 - 105

Available online: 13 Mar 2014 *

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