Title: InxGa1-xSb n-channel MOSFET: effect of interface states on CV characteristics

Authors: Muhammad Shaffatul Islam; Md. Nur Kutubul Alam; Md. Rafiqul Islam

Addresses: Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh ' Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh ' Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh

Abstract: The capacitance-voltage (CV) characteristics of InGaSb based n-MOSFET are investigated by quantum mechanical calculation solving 1D self-consistent Schrodinger-Poisson equation using Silvaco's ATLAS device simulation package. The charge density profile is determined with and without wave function penetration within the oxide layer and Neuman boundary condition. Quasi-static CV characteristics are studied both for the positive and negative interface charge densities. The results obtained from the simulation demonstrate that the significant shift in threshold voltage entirely depends on the polarity of the interface charge density. The oxide-dependent gate capacitance is also explained by simulating first eigen energy with and without wave function penetration.

Keywords: III-V MOSFET; indium gallium antimonide; InGaSb; capacitance-voltage characteristics; interface states; eigen energy; nanoelectronics; nanotechnology; simulation; charge density profile; oxide-dependent gate capacitance.

DOI: 10.1504/IJNT.2014.059812

International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.85 - 96

Available online: 13 Mar 2014 *

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