Title: Field effect transport properties of chemically treated graphene quantum dots

Authors: Hemen Kalita; V. Harikrishnan; M. Aslam

Addresses: Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India ' Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India ' Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India

Abstract: We report the field effect properties of lithographically fabricated FET with as-prepared graphene quantum dots (GQDs) and hydrazine treated GQDs as channel material. GQDs of 4.5 ± 0.55 nm average diameter are synthesised via an electrochemical approach using multiwalled carbon nanotubes (MWCNTs) as precursor. After treatment in hydrazine vapour for 24 h, the field effect measurements yield hole mobility of 0.01 cm2 V−1s−1and Ion/Ioff ratio of about 45. Hydrazine treated channel shows a significant decrease in resistance in comparison to the channel with as-prepared GQDs and is p-type under ambient conditions.

Keywords: graphene quantum dots; GQDs; p-type; hole dopant; adsorbates; hydrazine; nanoelectronics; nanotechnology; field effect transport properties; chemical treatment; lithography; multiwalled carbon nanotubes; MWCNTs; hole mobility.

DOI: 10.1504/IJNT.2014.059811

International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.75 - 84

Available online: 13 Mar 2014 *

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