Authors: Che-Sheng Chung; Sheng-Lyang Jang
Addresses: Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Section 4, Taipei 106, Taiwan ' Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, 43, Keelung Road, Section 4, Taipei 106, Taiwan
Abstract: Use of r-space one-particle self-consistent (SC) calculation may predict very-low-temperature currents under near-flatband-mode conditions over channels of MOSFET devices. The r-space one-particle SC band bending implemented by directed Hamiltonian-cycle algorithms leads to near-flatband-mode currents at temperatures lower than 77°K. Optimising the directed Hamiltonian-cycle graph by the transformation helps to obtain better solutions of the r-space one-particle SC calculation. To conquer the difficulties lack of some boundary- and initial-value problems, Newton's divided-difference formula (NBDF) extrapolated end point values before using the ratio scaling technique is proposed to evaluate the total charge sheet densities, the total SC electric fields, and the total SC potential energies. The calculated currents possibly belong to one of noise sources yielded by quantum calculation. Even though the off-state currents defined in the conventional compact models of MOSFET devices vanish, the weak-field very-low-temperature currents yielded by the r-space one-particle SC calculation do not vanish.
Keywords: Hamiltonian-cycle graph; MOSFET; NBDF; near flatband; one-particle band bending; self-consistency; weak field; very low temperature currents; nanoelectronics; nanotechnology.
International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.4 - 14
Available online: 13 Mar 2014 *Full-text access for editors Access for subscribers Purchase this article Comment on this article