Title: Nanobelt and nanosaw structures of II-VI semiconductors

Authors: Christopher Ma, Daniel Moore, Yong Ding, Jing Li, Zhong Lin Wang

Addresses: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA. ' School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA. ' School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA. ' School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA. ' School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA

Abstract: The II-VI semiconductors are important optoelectronic, luminescent, and lasing materials. This paper presents a review on synthesis, structure, and growth mechanisms of one-dimensional nanostructures of ZnS, CdSe, ZnSe, CdS and CdO. The two most frequently received wurtzite structures of these materials are ||nanobelts|| and ||nanosaws||. The nanosaws are suggested to be a result of atomic-termination induced asymmetric growth due to the cation-terminated, catalytically active (0001) surface, while the anion-terminated (000 ī) is chemically inactive. It has also been shown that the phase transformation from wurtzite to zinc blend could also be a factor in initiating the growth of the saw teeth. The applications and nanodevices that have been built using nanobelts are also presented.

Keywords: nanobelt; nanosaw; II–VI semiconductors; CdSe; CdS; ZnS; ZnSe; CdO; nanoribbon; nanotechnology; nano devices; nanostructures.

DOI: 10.1504/IJNT.2004.005978

International Journal of Nanotechnology, 2004 Vol.1 No.4, pp.431 - 451

Available online: 12 Jan 2005 *

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