Title: Band gap of silicon nanowires along [111] direction doped with Al atoms

Authors: Sana Kausar; Shirish Joshi

Addresses: Department of Physics, Govt. M.V.M. College Bhopal, 462001, Madhya Pradesh, India ' Department of Physics, Govt. M.V.M. College Bhopal, 462001, Madhya Pradesh, India

Abstract: In this work electronics property of hydrogen-passivated, free-standing silicon nanowire, oriented along [111] direction with triangular cross section was studied. Further the effect of doping of aluminium atoms on band structure is also analysed by DFT using GGA approximation. It is observed that the electronic properties of a semiconducting H-SiNW are dramatically altered upon adsorption.

Keywords: band gap; semiconducting silicon nanowires; aluminium atoms; DFT; density functional theory; GGA; generalised gradient approximation; nanoelectronics; nanotechnology; electronic properties; adsorption.

DOI: 10.1504/IJNP.2013.057168

International Journal of Nanoparticles, 2013 Vol.6 No.4, pp.275 - 281

Received: 18 Jun 2012
Accepted: 17 Jan 2013

Published online: 31 Mar 2014 *

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