Title: Epitaxially grown field-activated electroactive polymers for high performance organic electronics

Authors: Youn Jung Park; Insung Bae; Richard Hahnkee Kim; Cheolmin Park

Addresses: Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea ' Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea ' Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea ' Department of Materials Science and Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea

Abstract: This article describes our recent efforts of high throughput epitaxy of thin field-activated electroactive polymer (FEAP) films including poly(vinylidene fluoride) (PVDF), ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) and poly(vinylidene fluoride-co-trifluoroethylene-co-chlorofluoroethylene) (PVDF-TrFE-CTFE) for high performance organic electronic device applications. The method is based on development of highly ordered semicrystalline domains of FEAPs on a molecularly ordered poly(tetrafluoroethylene) (PTFE) substrate, combined with spin coating method over the area of a few centimetre square. In general, chain axes of FEAPs were aligned parallel to that of PTFE, i.e., the rubbing direction. More in details, the results for instance in the case of PVDF-TrFE show that the lattice match between (010)_PVDF-TrFE and (100)_PTFE results in b and c axis of PVDF-TrFE crystals preferentially parallel to a and c of PTFE, respectively and consequently produces global ordering of the edge-on PVDF-TrFE crystalline lamellae aligned perpendicular to the rubbing direction of PTFE, its c-axis. We also demonstrate that our epitaxially grown FEAP films on PTFE surface were successfully incorporated into various organic electronic devices for high device performance, including non-volatile memory capacitor, metal-ferroelectric-insulator-semiconductor memory element, field effect transistor type memory and high energy storage capacitor.

Keywords: ferroelectric polymers; epitaxy; PVDF-TrFE; PTFE; non volatile memory capacitors; electroactive polymers; high performance organic electronics; FEAP thin films.

DOI: 10.1504/IJNT.2013.054212

International Journal of Nanotechnology, 2013 Vol.10 No.8/9, pp.702 - 725

Published online: 01 Aug 2013 *

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