Title: Effect of temperature in electrochemical texturising of multi-crystalline silicon in KOH solution
Authors: Dinh Cong Truong; Madhu Abburi; Nguyen Tran Thuat; Tobias Bostrom; Quang Nguyen
Addresses: Laboratory for Nanotechnology, Vietnam National University-Ho Chi Minh City, Community 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City, Vietnam ' Norut Narvik AS, N-8504 Narvik, Norway ' Laboratory for Nanotechnology, Vietnam National University-Ho Chi Minh City, Community 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City, Vietnam ' Norut Narvik AS, N-8504 Narvik, Norway ' Norut Narvik AS, N-8504 Narvik, Norway
Abstract: In this paper we present the study of electrochemical etching of silicon in KOH solutions to improve texturisation and reflection properties of p-type multi-crystalline silicon. The influence of etching temperature on surface morphology and reflection properties of the silicon wafers has been investigated. The results of the study showed that etching at high temperatures formed isotropic textured concaves on the silicon surface which is similar to the effect of acidic etching. Etching at room temperature resulted in formation of a uniform nano-porous texture and lowest reflectance. With optimised etching conditions, the total reflectance of the textured surface reduced below 25%. These results can be utilised in further studies to improve the efficiency of solar cells based on multi-crystalline silicon.
Keywords: texturisation; multi-crystalline silicon; porous silicon; isotropic textured; etching temperature; electrochemical etching; reflection properties; silicon wafers; nanoporous texture; nanotechnology; total reflectance; solar cells.
International Journal of Nanotechnology, 2013 Vol.10 No.3/4, pp.288 - 295
Available online: 05 Apr 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article