Authors: Duy-Cuong Nguyen; Seigo Ito
Addresses: Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, Japan ' Department of Electrical Engineering and Computer Sciences, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, Japan
Abstract: Cu2Te particles were synthesised by ball milling and then printed on an In2S3/TiO2/FTO-glass substrate, resulting in superstrate-structured solar cells. The as-prepared Cu2Te particles were amorphous, but their crystallinity was improved after annealing at 400-650°C. The Cu2Te particles annealed at 400°C, melted partially, and a completely melted Cu2Te film was obtained at annealing temperatures of 600-650°C. The band gap of the Cu2Te films annealed at 400-600°C was approximately 0.8 eV. The photovoltaic characteristics of the best full Cu2Te cells were as follows: short-circuit current, 21 mA/cm²; open-circuit voltage, 0.24 V; fill factor, 0.3; and energy conversion efficiency, 1.57%. Thus, Cu2Te with its low melting point and high photocurrent is a promising candidate absorber layer for solar cell applications.
Keywords: Cu2Te particles; solar cells; superstrate; ball milling; printing; copper telluride; absorber layers.
International Journal of Nanotechnology, 2013 Vol.10 No.3/4, pp.269 - 278
Available online: 05 Apr 2013 *Full-text access for editors Access for subscribers Purchase this article Comment on this article