Title: Mn doped GaN thin films and nanoparticles

Authors: Zdeněk Sofer; David Sedmidubský; Štěpán Huber; Jiří Hejtmánek; Anna Macková; Roman Fiala

Addresses: Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6, Czech Republic ' Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6, Czech Republic ' Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, 166 28 Prague 6, Czech Republic ' Department of Magnetism and Superconductors, Institute of Physics of ASCR, v.v.i. Cukrovarnická 10, 162 00 Prague 6, Czech Republic ' Nuclear Physics Institute of the ASCR, v.v.i. 250 68 Řež, Czech Republic; Faculty of Science, Department of Physics, J.E. Purkinje University, České mládeže 8, 400 96 ústí nad Labem, Czech Republic ' Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University, V Holešovičkách 2, 180 00 Prague 8, Czech Republic

Abstract: Magnetically doped GaN in the form of thin films and nanoparticles has been investigated. The Mn doped GaN layers were grown on sapphire substrates by MOVPE. The influence of deposition condition on surface morphology, magnetic and structural properties was investigated. GaN:Mn epitaxial layers exhibit magnetic moment persisting up to room temperature. The magnetically doped layers were also prepared by ion implantation of GaN layers by Mn. The influence of free carrier concentration and other parameters on magnetic properties were investigated. The pure and transition metal (Cr, Mn and Fe) doped GaN nanoparticles were synthesised by decomposition of fluoride-based complex compound in ammonia atmosphere. Mn doped nanoparticles exhibit pure paramagnetic behaviour.

Keywords: GaN nanoparticles; GaN thin films; manganese; transition metals; MOVPE; ion implantations; doping; magnetism; spintronics; nanotechnology; gallium nitride; paramagnetic behaviour; sapphire substrates.

DOI: 10.1504/IJNT.2012.046754

International Journal of Nanotechnology, 2012 Vol.9 No.8/9, pp.809 - 824

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 04 May 2012 *

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