Authors: Ganga Prasad Pandey; Binod Kumar Kanaujia; Surendra K. Gupta; Shayna Jain
Addresses: Department of Electronics and Communication Engineering, Maharaja Agrasen Institute of Technology, Rohini, Delhi 110086, India. ' Department of Electronics and Communication Engineering, Ambedkar Institute of Technology, Geeta Colony, Delhi 110031, India. ' Department of Electronics Engineering, Ambedkar Polytechnic, Shakarpur, Delhi, India. ' Department of Electronics and Communication Engineering, Ambedkar Institute of Technology, Geeta Colony, Delhi 110031, India
Abstract: In this paper, a compact H-shaped microstrip antenna loaded with tunnel diode is proposed and investigated theoretically. The H-shaped patch is investigated, and it has been concluded that a notch dimension of 8 mm by 6 mm gives best results. Then, the tunnel diode is loaded, which provides tunability to the microstrip antenna. The numerical results for input impedance, return loss, resonant frequency and radiation pattern are presented and compared with simulated results. The radiation pattern is varied from 63.8° to 60.6° with bias voltage, and a frequency agility of 25.28% has been achieved.
Keywords: beam width; gap capacitance; compact microstrip antenna; radiation pattern; tunnel diodes; frequency agility.
International Journal of Radio Frequency Identification Technology and Applications, 2011 Vol.3 No.4, pp.244 - 259
Available online: 18 Nov 2011 *Full-text access for editors Access for subscribers Purchase this article Comment on this article