Title: Plasma assisted vapor deposition processes

Authors: R.F. Bunshah, C.V. Deshpandey

Addresses: Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024, USA. ' Department of Materials Science and Engineering, University of California, Los Angeles, CA 90024, USA

Abstract: Plasma Assisted Vapor Deposition Processes are used for the deposition of various compounds dielectric materials, novel materials (like diamond and cubic boron nitride) for a large number of applications in optics, microelectronics, tribology etc. This paper discusses these processes in terms of the interaction between the plasma parameters and the process parameters. Important distinctions between the various processes emerge. The all important role of plasma volume chemistry in these processes is discussed.

Keywords: plasma assisted chemical vapour deposition; plasma assisted physical vapour deposition; reactive sputtering; activated reactive evaporation; process parameters; plasma volume chemistry.

DOI: 10.1504/IJMPT.1993.036527

International Journal of Materials and Product Technology, 1993 Vol.8 No.2/3/4, pp.115 - 129

Published online: 04 Nov 2010 *

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