Title: Partial SOI superjunction power LDMOS for power IC applications

Authors: Yu Chen, Yung C. Liang, Ganesh S. Samudra, Kavitha D. Buddharaju, Hanhua Feng

Addresses: Department of Electrical and Computer Engineering, National University of Singapore, Kent Ridge, 119 260, Singapore. ' Department of Electrical and Computer Engineering, National University of Singapore, Kent Ridge, 119 260, Singapore. ' Department of Electrical and Computer Engineering, National University of Singapore, Kent Ridge, 119 260, Singapore. ' AŽSTAR Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore ' AŽSTAR Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore

Abstract: An enabling superjunction device technology, which is fully integrated on the partial silicon on insulator (PSOI) platform using the bulk silicon substrate, is proposed and fabricated. The proposed technology has the potential to eliminate the substrate assisted depletion. It enables the implementation of lateral superjunction power MOSFET (SJ LDMOS) on bulk silicon substrate without sacrificing its thermal performance. In this paper, the approach was demonstrated successfully on both p-i-n diode and planar gate SJ LDMOS devices. The proposed technology has enabled the fabrication of SJ power integrated circuits (PIC) on the bulk silicon substrate for future automotive power electronics applications.

Keywords: superjunction structures; power integrated circuits; PICs; silicon on insulator; PSOI; partial SOI; substrate assisted depletion; power MOSFET; automotive power electronics; superjunction power LDMOS; bulk silicon substrate; vehicle electronics.

DOI: 10.1504/IJPELEC.2010.035865

International Journal of Power Electronics, 2010 Vol.2 No.4, pp.363 - 373

Received: 24 Feb 2010
Accepted: 26 Mar 2010
Published online: 07 Oct 2010 *

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