Title: Tailoring the oxygen distribution in 300 mm Czochralski crystal of pure silicon using cusp magnetic field
Authors: Prashant R. Gunjal, Palghat A. Ramachandran
Addresses: Department of Energy Environmental and Chemical Engineering, Washington University in St. Louis, MO 63130, USA. ' Department of Energy Environmental and Chemical Engineering, Washington University in St. Louis, MO 63130, USA
Abstract: Oxygen content in the pure Silicon crystal is inevitable because of the significant rate of corrosion of the crucible walls at high temperature. Precise control of oxygen is possible only by manipulating underlying flow. A global model was developed to investigate the effect of crystal and crucible rotations in absence and presence of the Electromagnetic Fields (EMs) on melt flow. The simulation results show that strong buoyancy driven flow interaction generates non-uniformity in oxygen concentration near the edge of the crystal in the absence of magnetic field. Application of external field facilitates more pumping of melt underneath the crystal that prevents stratification of oxygen near the edge.
Keywords: Czochralski crystal; crystal growth; pure silicon; rotational flow; thermofluids; magnetohydrodynamics; oxygen distribution; cusp magnetic field; modelling; crystal rotations; crucible rotations; electromagnetic fields; melt flow; oxygen stratification; CFD; computational fluid dynamics; simulation.
Progress in Computational Fluid Dynamics, An International Journal, 2010 Vol.10 No.5/6, pp.307 - 318
Published online: 26 Sep 2010 *Full-text access for editors Access for subscribers Purchase this article Comment on this article