Title: Polishing properties of porous silica abrasive on hard disk substrate CMP

Authors: Ping Liu, Hong Lei, RuLing Chen

Addresses: Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444, China. ' Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444, China. ' Research Center of Nano-science and Nano-technology, Shanghai University, Shanghai 200444, China

Abstract: Chemical mechanical polishing (CMP) is the only technology to provide global planarisation of topography with a low post-planarisation slope. Abrasive is one of the key influencing factors on the surface quality during the CMP. Traditional silica abrasive is easy to cause polishing scratches since it is compact solid particle. In this work the polishing properties of porous silica abrasive in hard disk substrate CMP were investigated. The results show that the polishing down force and rotating speed have a strong influence on the material removal rate and average surface roughness of the hard disk substrate. After polishing with the slurry containing the porous silica abrasive, a smooth hard disk substrate surface was obtained.

Keywords: chemical mechanical polishing; CMP; porous silica abrasive; hard disk substrate; planarisation; abrasive technology; surface quality; polishing downforce; rotating speed; material removal rate; MRR; surface roughness.

DOI: 10.1504/IJAT.2010.034053

International Journal of Abrasive Technology, 2010 Vol.3 No.3, pp.228 - 237

Available online: 06 Jul 2010 *

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