Article: Angular dependence of shot noise in diluted magnetic semiconductors resonant tunnelling diodes Journal: International Journal of Nanoparticles (IJNP) 2010 Vol.3 No.1 pp.14 - 21 Abstract: In this work, spin-dependent current and shot noise transport in double magnetic barrier resonant tunnelling diodes is theoretically investigated. All components of the junctions, including external and central (spacer) electrodes are non-magnetic semiconductor, which have been separated by two II-VI diluted magnetic semiconductors (II-IV DMSs) layers. Our calculations are based on parabolic energy band approximation and transfer matrix method in the presence of external magnetic field and also applied voltage, within the phase coherent transport regime. In order to calculate the magnetisation of DMS, we have used the mean-field approximation in low magnetic field (B < 5T). We also examine the dependence of shot noise and tunnelling current densities on applied voltage and the relative angle between the magnetisations of two DMS layers in CdTe/CdMnTe heterostructures. All current and shot-noise components show a negative differential resistor (NDR), which originates from the resonant states tunnelling through quantum well. Also, the produced high spin polarisation makes the nanostructure a good candidate for new spin filter devices. Thus, these numerical results may shed light on the next applications of the quantum multilayer systems and make them convenient for future spintronics devices. Inderscience Publishers - linking academia, business and industry through research

Title: Angular dependence of shot noise in diluted magnetic semiconductors resonant tunnelling diodes

Authors: Ali Asghar Shokri

Addresses: Department of Physics, Payame Noor University (PNU), Nejatollahi St. 159995-7613, Tehran, Iran; Computational Physical Sciences Research Laboratory, Department of Nano-Science, Institute for Research in Fundamental Science (IPM), P.O. Box 19395-5531, Tehran, Iran

Abstract: In this work, spin-dependent current and shot noise transport in double magnetic barrier resonant tunnelling diodes is theoretically investigated. All components of the junctions, including external and central (spacer) electrodes are non-magnetic semiconductor, which have been separated by two II-VI diluted magnetic semiconductors (II-IV DMSs) layers. Our calculations are based on parabolic energy band approximation and transfer matrix method in the presence of external magnetic field and also applied voltage, within the phase coherent transport regime. In order to calculate the magnetisation of DMS, we have used the mean-field approximation in low magnetic field (B < 5T). We also examine the dependence of shot noise and tunnelling current densities on applied voltage and the relative angle between the magnetisations of two DMS layers in CdTe/CdMnTe heterostructures. All current and shot-noise components show a negative differential resistor (NDR), which originates from the resonant states tunnelling through quantum well. Also, the produced high spin polarisation makes the nanostructure a good candidate for new spin filter devices. Thus, these numerical results may shed light on the next applications of the quantum multilayer systems and make them convenient for future spintronics devices.

Keywords: spin-polarised transport; diluted magnetic semiconductors; DMSs; quantum tunnelling; shot noise transport; Fano factor; resonant tunnelling diodes; spin-dependent current; energy band approximation; transfer matrix; magnetisation; nanostructure; spin filter; spintronics; nanotechnology; nanoparticles.

DOI: 10.1504/IJNP.2010.033218

International Journal of Nanoparticles, 2010 Vol.3 No.1, pp.14 - 21

Published online: 13 May 2010 *

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Title: Angular dependence of shot noise in diluted magnetic semiconductors resonant tunnelling diodes

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