Title: A functional model of silicon carbide JFET and its use in the analysis of switching-transient and impact of gate resistor, miller effect and parasitic inductance
Authors: Hua Bai, Sanbo Pan, Chris Mi, Tim Lin
Addresses: University of Michigan-Dearborn, 4901 Evergreen, Dearborn, MI 48128, USA. ' University of Michigan-Dearborn, 4901 Evergreen, Dearborn, MI 48128, USA. ' University of Michigan-Dearborn, 4901 Evergreen, Dearborn, MI 48128, USA. ' Aegis Technology, Inc., 12630 G. Westminster Ave., Santa Ana, CA 92706 USA
Abstract: A functional model of silicon carbide (SiC) JFET was developed to study its performance. Based on this model, the gate resistor in the gate drive circuit of SiC JFET is optimised with comprehensive consideration of gate current impact, miller effect, switching speed and voltage spikes. The switch on oscillation caused by parasitic inductance is analysed and methods are proposed to mitigate the oscillation. Experiments on a 300 V prototype validated the proposed model.
Keywords: silicon carbide; JFET performance; inverters; miller effect; switching speed; parasitic inductance; power electronics; gate resistors; gate current impact; voltage spikes; oscillation; junction gate field-effect transistor.
International Journal of Power Electronics, 2010 Vol.2 No.2, pp.164 - 175
Published online: 25 Jan 2010 *Full-text access for editors Access for subscribers Purchase this article Comment on this article