Title: Structure and luminescence of silicon nanocrystals embedded in SiO2

Authors: G.G. Ross, D. Barba, F. Martin

Addresses: INRS-Energie, Materiaux et Telecommunications, 1650, Blvd. Lionel-Boulet, Varennes (Quebec), J3X 1S2, Canada. ' INRS-Energie, Materiaux et Telecommunications, 1650, Blvd. Lionel-Boulet, Varennes (Quebec), J3X 1S2, Canada. ' INRS-Energie, Materiaux et Telecommunications, 1650, Blvd. Lionel-Boulet, Varennes (Quebec), J3X 1S2, Canada

Abstract: According to the International Technology Roadmap for Semiconductors, there is no manufacturable solution to address the increasing interconnection lengths in microelectronic devices. Optical interconnects are known to be a possible solution to this problem. The integration of optoelectronic components on an all Si matrix would considerably simplify the conception and fabrication of integrated optoelectronic devices and low-dimensional silicon could play a key role in this integration. Silicon nanocrystals embedded in a silicon oxide layer show many of the required properties such as intense luminescent emission, good wave-guiding properties and sufficient light amplification. The aim of this review is to state the motivation for research in nanophotonics and present the state-of-the-art of this emerging technology. We will pay particular attention to the Canadian contribution in the progress of the research towards the realisation of all-Si optoelectronics technology.

Keywords: silicon nanocrystals; nanophotonics; luminescence; silicon lasers; ion implantation; PECVD; PLD; silicon dioxide; superlattices; quantum confinement; interface states; semiconductors; silicon optoelectronics; nanotechnology.

DOI: 10.1504/IJNT.2008.019829

International Journal of Nanotechnology, 2008 Vol.5 No.9/10/11/12, pp.984 - 1017

Published online: 09 Aug 2008 *

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