Title: Preparation and characterisation of ZnO:Ga films deposited on polyimide substrate by r.f. magnetron sputtering

Authors: Sumin Li, Yutao Zhao, Zhao Zhang

Addresses: School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, PR China. ' School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, PR China. ' School of Materials Science and Engineering, Jiangsu University, Zhenjiang, Jiangsu 212013, PR China

Abstract: Gallium-doped Zinc Oxide (GZO) thin films have been deposited onto Polyimide (PI) substrate by r.f. magnetron sputtering. The effects of the sputtering argon pressure, r.f. power, target-substrate distance, negative substrate bias on the electrical, structural, morphological properties and the growth rate of film are presented. The best results were obtained for a distance of 70 mm, argon sputtering pressure of 0.1 Pa, r.f. power of 100 W and the negative substrate bias of 40 V, where a resistivity of 9.4 × 10−4 Ω cm was achieved. The transmittance in the visible range exceeded 78%.

Keywords: magnetron sputtering; ZnO:Ga film; flexible substrates; electrical properties; optical properties; gallium-doped zinc oxide; GZO thin films; polyimide substrates.

DOI: 10.1504/IJMPT.2008.018030

International Journal of Materials and Product Technology, 2008 Vol.31 No.2/3/4, pp.326 - 338

Published online: 27 Apr 2008 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article