Title: Precision wafer thinning and its surface conditioning technique

Authors: H-T. Young, C-C. Lin, H-T. Liao, M. Yang

Addresses: Department of Mechanical Engineering, National Taiwan University, Taipei 106, Taiwan (ROC). ' Department of Mechanical Engineering, National Taiwan University, Taipei 106, Taiwan (ROC). ' Department of Mechanical Engineering, National Taiwan University, Taipei 106, Taiwan (ROC). ' Phoenix Silicon International Corporation, Hsinchu 300, Taiwan (ROC)

Abstract: Experimental observations were conducted to investigate the effects of various parameters on the surface finish and SubSurface Damage (SSD) of ground silicon wafers. A novel design in wet chemical etching was proposed and implemented to provide wafers a means of strength enhancement while allowing the user to control the backside wafer surface finish. The results indicate that no propagating crystalline defect was accompanied, but leaving the wafer in a rather good surface integrity for back metal adhesion purposes.

Keywords: silicon wafers; surface conditioning; precision wafer thinning; wet chemical etching; surface finish; subsurface damage; grinding; strength enhancement; surface integrity; back metal adhesion.

DOI: 10.1504/IJMPT.2008.015893

International Journal of Materials and Product Technology, 2008 Vol.31 No.1, pp.36 - 45

Available online: 02 Dec 2007 *

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