Title: Physics-based reverse recovery modelling of ultrafast recovery Si diodes with carrier lifetime control
Authors: Imen Abdennabi; Nathalie Batut; Ambroise Schellmanns; Marie-Pierre Chauvat; Fabrice Roqueta; Arnaud Yvon; Sophie Ngo
Addresses: GREMAN-UMR7347, 16 Rue Pierre et Marie Curie, 37000 Tours, France ' GREMAN-UMR7347, 16 Rue Pierre et Marie Curie, 37000 Tours, France ' GREMAN-UMR7347, 16 Rue Pierre et Marie Curie, 37000 Tours, France ' CIMAP-UMR 6252, 6 Boulevard du Maréchal Juin, 14050 Caen Cedex, France ' STMicroelectronics, 10 Rue Thalès de Milet, 37100 Tours, France ' STMicroelectronics, 10 Rue Thalès de Milet, 37100 Tours, France ' STMicroelectronics, 10 Rue Thalès de Milet, 37100 Tours, France
Abstract: Ultrafast recovery diodes are often used in high frequency switching applications because of their ability to switch from the ON-state to OFF-state very quickly. However, ultrafast recovery diode switching performances are very difficult to predict using technology computer-aided design (TCAD) simulation tools, especially when carrier lifetime is adjusted. To model carrier lifetime, the Shockley-read-hall (SRH) recombination theory is used in TCAD tools as a standard simulation model. This model is not sufficient as it considers the presence of only one deep energy level located at the material mid-gap. Used as a carrier lifetime killer, platinum doping introduces several deep energy levels facilitating the minority carrier recombination. Thus, this paper presents a new approach based on trap physical modelling. Trap characteristics are determined using deep level transient spectroscopy (DLTS) measurement technique. This approach can significantly reduce the large mismatch observed between the ultrafast recovery diode turn-off measurements and the standard simulation model results.
Keywords: ultrafast PIN diode; turn-off transient characteristics; platinum diffusion; minority carrier lifetime control; deep level transient spectroscopy; DLTS.
International Journal of Powertrains, 2025 Vol.14 No.1, pp.44 - 58
Received: 21 Jul 2023
Accepted: 23 May 2024
Published online: 10 Jul 2025 *