Article: Annealing effects on post-deposition β-Ga2O3 thin film prepared through radiofrequency magnetron sputtering Journal: International Journal of Nanotechnology (IJNT) 2024 Vol.21 No.6 pp.437 - 456 Abstract: Radiofrequency magnetron sputtering was employed to deposit Ga2O3 thin films on c-plane sapphire substrates, and the deposited thin films were then annealed at varying temperatures, durations, and atmospheres. We subsequently examined the effects of annealing conditions on the morphology, crystallinity, and optical properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) characterisation indicated that a 90-min annealing duration at 900°C under a nitrogen atmosphere and at 1000°C under an oxygen atmosphere were optimal for achieving preferred crystalline quality and improved surface smoothness. For different annealing durations, the slight variation in optical band gap showed good consistency with the XRD analysis results. The increase in annealing temperature improved the crystallinity; however, an excessively high annealing temperature caused the band gap to decrease. Long-term annealing treatment also decreased the lattice constant of β-Ga2O3. These findings offer an effective preparing method for achieving high-performance β-Ga2O3 for optoelectronic and electronic equipment. Inderscience Publishers - linking academia, business and industry through research

Title: Annealing effects on post-deposition β-Ga₂O₃ thin film prepared through radiofrequency magnetron sputtering

Authors: Liuhan Zhou; Lai Yang; Fashun Yang; Xu Wang; Kui Ma

Addresses: Department of Electronics, Guizhou University, Guiyang, 550025, China ' Department of Electronics, Guizhou University, Guiyang, 550025, China ' Department of Electronics, Guizhou University, Guiyang, 550025, China ' Department of Electronics, Guizhou University, Guiyang, 550025, China ' Department of Electronics, Guizhou University, Guiyang, 550025, China

Abstract: Radiofrequency magnetron sputtering was employed to deposit Ga₂O₃ thin films on c-plane sapphire substrates, and the deposited thin films were then annealed at varying temperatures, durations, and atmospheres. We subsequently examined the effects of annealing conditions on the morphology, crystallinity, and optical properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) characterisation indicated that a 90-min annealing duration at 900°C under a nitrogen atmosphere and at 1000°C under an oxygen atmosphere were optimal for achieving preferred crystalline quality and improved surface smoothness. For different annealing durations, the slight variation in optical band gap showed good consistency with the XRD analysis results. The increase in annealing temperature improved the crystallinity; however, an excessively high annealing temperature caused the band gap to decrease. Long-term annealing treatment also decreased the lattice constant of β-Ga₂O₃. These findings offer an effective preparing method for achieving high-performance β-Ga₂O₃ for optoelectronic and electronic equipment.

Keywords: β-Ga₂O₃ thin film; post-deposition annealing; RF magnetron sputtering; crystalline quality; band gap.

DOI: 10.1504/IJNT.2024.144180

International Journal of Nanotechnology, 2024 Vol.21 No.6, pp.437 - 456

Received: 28 Dec 2023
Accepted: 19 Oct 2024
Published online: 30 Jan 2025 *

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Title: Annealing effects on post-deposition β-Ga2O3 thin film prepared through radiofrequency magnetron sputtering

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Title: Annealing effects on post-deposition β-Ga₂O₃ thin film prepared through radiofrequency magnetron sputtering