Title: Effect of post-deposition annealing on CeO₂ passivation layer spin coated on silicon substrate in nitrogen ambience

Authors: Kammutty Musliyarakath Abdul Shekkeer; Kuan Yew Cheong; Hock Jin Quah

Addresses: Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, 14300, Nibong Tebal, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract: The metal-organic decomposed cerium oxide (CeO₂) precursor was deposited on a silicon (Si) substrate using the spin coating technique. The asdeposited CeO₂ passivation layer was subjected to post-deposition annealing at 600, 700, 800, and 900°C for 30 min in nitrogen ambience. The employment of nitrogen ambience was effective in minimising the formation of interfacial layer by acting as a nitrogen diffusion barrier layer at the interface. The CeO₂passivation layer annealed at 800°C has achieved a lower leakage current density and the highest electric breakdown field due to the passivation of interface defects by nitrogen ions. The detailed study of physical and electrical characteristics of the investigated CeO₂ passivation layers on Si substrate was reported in this work.

Keywords: cerium oxide; silicon; MOS capacitor; nitrogen; annealing.

DOI: 10.1504/IJNT.2024.141764

International Journal of Nanotechnology, 2024 Vol.21 No.4/5, pp.339 - 352

Published online: 01 Oct 2024 *

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