Title: Studies on Ga₂O₃ thin films subjected to post-deposition annealing in argon ambient

Authors: P.H.M.A. Hedei; Z. Hassan; S.S. Ng; H.J. Quah

Addresses: Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia

Abstract: The effects of radio frequency (RF) magnetron sputtered Ga₂O₃ thin films subjected to different post-deposition annealing temperatures at 400, 600, 800 and 1000°C for 60 min in argon ambient were investigated. The grazing incidence X-ray diffraction had discovered that an amorphous Ga₂O₃ thin film was formed during post-deposition annealing at 400°C. The detection of polycrystalline β-Ga₂O₃ phase was observed when the Ga₂O₃ thin films were annealed at/beyond 600°C, wherein an improvement in crystallinity was attained as the post-deposition annealing temperature was increased from 600°C to 1000°C. Nevertheless, the employment of the highest post-deposition annealing temperature at 1000°C has triggered an excessive diffusion of oxygen anions to the interface contributing to the formation of the thickest SiO₂interfacial layer. It was determined that Ga₂O₃ thin film annealed at 1000°C had attained the lowest leakage density when compared with the Ga₂O₃ thin films annealed at lower temperatures.

Keywords: gallium oxide; silicon; sputtering; grazing incidence X-ray diffraction; annealing.

DOI: 10.1504/IJNT.2024.141761

International Journal of Nanotechnology, 2024 Vol.21 No.4/5, pp.299 - 312

Published online: 01 Oct 2024 *

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