Title: Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices

Authors: N. Islam; M.S.N.S. Baharin; A.F.A. Rahim; M.F.A.J. Khan; N.A. Ghazali; A.S.A. Bakar; M.F.P. Mohamed

Addresses: School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Pulau Pinang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas, 11900, Pulau Pinang, Malaysia ' Faculty of Electrical Engineering, Universiti Teknologi Mara (UiTM), Cawangan Pulau Pinang, 13500, Pulau Pinang, Malaysia ' School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Pulau Pinang, Malaysia ' School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Pulau Pinang, Malaysia ' Faculty of Science, Physics Department, Universiti Malaya, Low Dimensional Material Research Center (LDMRC), 50603, Kuala Lumpur, Malaysia ' School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Pulau Pinang, Malaysia

Abstract: AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of AlGaN/GaN MOSHEMTs. This research investigates the trapping effects of technology computer aided design (TCAD), device simulation on "Silvaco" Software. Thus, it is obverse that changing the donor or acceptor traps density with trap energy at the HfAlO/AlGaN interface, which impacts the I_D vs. V_GS, I_D vs. V_DS, and transconductance characteristics curve. Moreover, it also influences the interface charge, 2DEG density, and Threshold Voltage (V_TH). On the contrary, varying donor or acceptor trap energy does not illustrate a significant impact on the characteristics curve because both donor and acceptor traps are fully ionised. Eventually, it is summarised that the I vs. V characteristics curve of the AlGaN/GaN, MOSHEMT, is highly influenced by the effective positive charge density at the HfAlO/AlGaN interface.

Keywords: GaN; metal oxide semiconductor high electron mobility transistors; MOSHEMT; HEMT; high electron mobility transistor; trap; density; TCAD; technology computer aided design; characteristics curve; power devices; semiconductor devices; wide bandgap.

DOI: 10.1504/IJNT.2024.141758

International Journal of Nanotechnology, 2024 Vol.21 No.4/5, pp.261 - 273

Published online: 01 Oct 2024 *

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