Article: Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique Journal: International Journal of Nanotechnology (IJNT) 2024 Vol.21 No.4/5 pp.214 - 225 Abstract: The tuneable wide direct bandgap (covering a broad range of spectral regions) of III-nitride semiconductors, particularly indium gallium nitride (InGaN), has credited this material as a promising candidate for optoelectronic devices such as solar cells and photodetectors with the ability to have a selective or narrow response. However, developing such a device is not a straightforward process due to phase separation and composition inhomogeneity in InGaN ternary alloy. Thus, it is crucial to rigorously optimise the growth process and carry out an in-depth characterisation to suppress defect formation and obtain a high-quality InGaN active layer, which is suitable for the subsequent device fabrication process. In this work, a series of InxGa1-xN epilayers were epitaxially grown over a commercial 2" AlN/sapphire template using Taiyo Nippon Sanso Corporation (TNSC) metal-organic chemical vapour deposition (MOCVD) system. Then, to study the effect of the indium incorporation process and the correlation with its physical properties, the InxGa1-xN epilayers were grown at a different temperature setting from 860°C to 820°C. The structural, morphology and optical properties of the grown structure were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Inderscience Publishers - linking academia, business and industry through research

Title: Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique

Authors: Ahmad Sauffi Yusof; Zainuriah Hassan; Sha Shiong Ng; Mohd Anas Ahmad; Way Foong Lim; Sidi Ould Saad Hamady; Nicolas Fressengeas

Addresses: Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia; Laboratoire Matériaux Optiques Photonique et Systèmes (LMOPS), Université de Lorraine, CentraleSupélec, F-57000, Metz, France ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800, Penang, Malaysia ' Laboratoire Matériaux Optiques Photonique et Systèmes (LMOPS), Université de Lorraine, CentraleSupélec, F-57000, Metz, France ' Institut Jean Lamour (IJL), Université de Lorraine, Centre national de la recherche scientifique (CNRS), F-54000 Nancy, France

Abstract: The tuneable wide direct bandgap (covering a broad range of spectral regions) of III-nitride semiconductors, particularly indium gallium nitride (InGaN), has credited this material as a promising candidate for optoelectronic devices such as solar cells and photodetectors with the ability to have a selective or narrow response. However, developing such a device is not a straightforward process due to phase separation and composition inhomogeneity in InGaN ternary alloy. Thus, it is crucial to rigorously optimise the growth process and carry out an in-depth characterisation to suppress defect formation and obtain a high-quality InGaN active layer, which is suitable for the subsequent device fabrication process. In this work, a series of In_xGa_1-xN epilayers were epitaxially grown over a commercial 2" AlN/sapphire template using Taiyo Nippon Sanso Corporation (TNSC) metal-organic chemical vapour deposition (MOCVD) system. Then, to study the effect of the indium incorporation process and the correlation with its physical properties, the In_xGa_1-xN epilayers were grown at a different temperature setting from 860°C to 820°C. The structural, morphology and optical properties of the grown structure were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively.

Keywords: InGaN; MOCVD; metal-organic chemical vapour deposition; thin-film; characterisation; AlN.

DOI: 10.1504/IJNT.2024.141754

International Journal of Nanotechnology, 2024 Vol.21 No.4/5, pp.214 - 225

Published online: 01 Oct 2024 *

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Title: Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique

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