Authors: Todd G. Mckenzie, Yiming Li
Addresses: SOI Device Modeling and Simulation Department IBM Microelectronics, Essex Junction, VT, USA. ' Department of Communication Engineering, National Chiao Tung University, Hsinchu, Taiwan
Abstract: This work presents a continuous, analytic drain-current model for symmetric DG PMOSFETs. The model is derived from the closed form solution of Poisson|s equation and current continuity equation without the charge sheet approximation. The model is extended to include the mobility degradation effect. In addition, a fast solver is presented which determines drain current to within a user-defined accuracy. The new model is fit to hardware, and I–V curves comparing the analytic model to experimental data are shown.
Keywords: DG PMOSFETs; MOSFETs; analytical modelling; drain current models; simulation; calibration; nanoscale technology; nanotechnology; mobility degradation.
International Journal of Computational Science and Engineering, 2006 Vol.2 No.3/4, pp.144 - 147
Available online: 14 Mar 2007 *Full-text access for editors Access for subscribers Purchase this article Comment on this article