Title: Wigner function approach to nano device simulation

Authors: Hans Kosina

Addresses: TU Vienna, Institute for Microelectronics, Gusshausstrasse 27–29, A-1040 Vienna, Austria

Abstract: Coherent transport in mesoscopic devices is well described by the Schrodinger equation supplemented by open boundary conditions. When electronic devices are operated at room temperature, however, a realistic transport model needs to include carrier scattering. In this work, the kinetic equation for the Wigner function is employed as a model for dissipative quantum transport. Carrier scattering is treated in an approximate manner through a Boltzmann collision operator. The development of Monte-Carlo algorithms for this quantum kinetic equation is complicated by the fact that, as opposed to the semi-classical case, the integral kernel is no longer positive. This so-called negative sign problem requires the introduction of new numerical techniques in order to obtain stable Monte-Carlo methods. A particular method for the solution of the stationary Wigner equation is presented. Applications to single barrier and double barrier structures are discussed.

Keywords: device simulation; quantum transport; Wigner function; Monte Carlo method; resonant tunnelling diodes; nanodevices; mesoscopic devices; transport models; carrier scattering; barrier structures; electronic transport; nanoscale technology; nanotechnology.

DOI: 10.1504/IJCSE.2006.012762

International Journal of Computational Science and Engineering, 2006 Vol.2 No.3/4, pp.100 - 118

Available online: 14 Mar 2007 *

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