Title: High-sensitivity room temperature p-doped and undoped GaN thin film resistive gas sensor

Authors: M. Hasnan; R.I.M. Asri; Z. Hassan; S.A.A. Abdalmohammed; M. Nuzaihan; M. Inaba; S. Falina; M. Syamsul

Addresses: Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia; Physics Department, College of Education, University of Garmian, 46021, Kalar, Iraq ' Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), 01000, Perlis, Malaysia ' Faculty of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan ' Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; Faculty of Science and Engineering and Institute of Nano Science and Nano Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia; Faculty of Science and Engineering and Institute of Nano Science and Nano Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan

Abstract: The behaviour and performance of p-doped GaN and undoped GaN thin film in the presence of methanol gas were studied. GaN thin films were grown using metal organic chemical vapour deposition (MOCVD), which were then fabricated into resistive sensors. Gas-sensing characterisation with the in-house gas chamber demonstrates that the resistive sensors based on undoped and p-doped GaN exhibit high sensitivity and fast response to methanol vapour in less than a minute, as well as excellent stability in room temperature operations. Without high temperature measurements, both undoped and p-doped GaN resistive sensors exhibit significant resistance variation and response over time when exposed to methanol, albeit with distinct properties. Here we demonstrate the comparison between the two and their sensing capabilities of both p-doped GaN and undoped GaN thin film resistive sensors.

Keywords: p-doped GaN; undoped GaN; thin film; sensor.

DOI: 10.1504/IJNT.2022.124520

International Journal of Nanotechnology, 2022 Vol.19 No.2/3/4/5, pp.418 - 429

Published online: 27 Jul 2022 *

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