Title: Impedance spectroscopy analysis of Al/100-plane AlN/p-Si MIS prepared by HiPIMS method for tailoring dielectric properties
Authors: Zulkifli Azman; Nafarizal Nayan; Megat Muhammad Ikhsan Megat Hasnan; Ahmad Shuhaimi Abu Bakar; Mohamad Hafiz Mamat; Mohd Zamri Mohd Yusop
Addresses: Microelectronics and Nanotechnology-Shamsuddin Research Centre (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor, Malaysia ' Microelectronics and Nanotechnology-Shamsuddin Research Centre (MiNT-SRC), Universiti Tun Hussein Onn Malaysia, 86400, Parit Raja, Batu Pahat, Johor, Malaysia ' Faculty of Engineering, Universiti Malaysia Sabah, Jalan UMS, 88400, Kota Kinabalu, Sabah, Malaysia ' Low Dimensional Material Research Centre, Universiti Malaya, 50630 Kuala Lumpur, Malaysia ' NANO-ElecTronic Centre (NET), Universiti Teknologi Mara, 40450, Shah Alam, Selangor, Malaysia ' Faculty of Mechanical Engineering, Universiti Teknologi Malaysia, 81310 Johor, Malaysia
Abstract: The effects of variation of sputtering pressure of AlN HiPIMS deposition on Si substrate to the structure and electrical properties were investigated through XRD, AFM and impedance spectroscopy method. The strong preferred 100-plane AlN was observed for all samples from XRD pattern. The AlN thin film thickness was observed decrease with the increase of sputtering pressure. AFM analysis shows the lowest surface roughness at 0.84 nm for 5 mTorr sputtering pressure. Impedance spectroscopy analysis of Al/100-plane AlN/Si MIS structure shows the electrical conductivity of AlN was directly proportional to the sputtering pressure and stable with temperature ranging from room temperature (299 K) to 353 K. Good dielectric stability was achieved at 3 mTorr sputtering pressure for all variation temperature and the dielectric constant calculated at average 3.5.
Keywords: HiPIMS; aluminium nitride; impedance; dielectric; conductivity; thin film; magnetron sputtering; properties; MIS; metal-insulator-semiconductor.
International Journal of Nanotechnology, 2022 Vol.19 No.2/3/4/5, pp.404 - 417
Published online: 27 Jul 2022 *Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article