Title: Analytical characterisation of 3D nano scale ultra-thin film surrounding gate MOSFET

Authors: Aditya Agarwal; R.L. Sharma; Prashant Mani

Addresses: Department of ECE, Noida International University, Greater Noida, Uttar Pradesh, India ' Department of ECE, Noida International University, Greater Noida, Uttar Pradesh, India ' SRM Institute of Science and Technology, Modinagar, Uttar Pradesh, India

Abstract: This research focuses on characterisation and development of a drain current model for a 3D nanoscale surrounding gate metal oxide semiconductor field-effect transistor (SG MOSFET). The expressions for transconductance and subthreshold swing were also obtained. The drain current modelling reflects enhanced current and suppressed output transconductance. The expression for threshold voltage is also taken in the current work. The various technology parameters were taken, and the work function difference has also been presented. The results show that the surrounding gate MOSFET device offers improved performance over other devices. Simulation results verified using 3DTCAD Silvaco device simulator.

Keywords: threshold voltage; sub-threshold voltage; surrounding gate MOSFET; short channel effects; SCEs.

DOI: 10.1504/IJESMS.2022.123350

International Journal of Engineering Systems Modelling and Simulation, 2022 Vol.13 No.2, pp.134 - 139

Published online: 10 Jun 2022 *

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