Title: Subsurface damage measurement in silicon wafers with cross-polarisation confocal microscopy

Authors: W.K. Lu, J.G. Sun, Z.J. Pei

Addresses: Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, KS 66502, USA. ' Argonne National Laboratory, Energy Technology Division, Argonne, IL 60439, USA. ' Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, KS 66502, USA

Abstract: Silicon wafers are used as the substrates upon which over 90% of the semiconductor devices are manufactured. A series of processes are needed to manufacture silicon wafers. Some processes will induce SubSurface Damage (SSD) that should be eliminated by subsequent processes. Therefore, the assessment of SSD is critically important to optimise manufacturing processes and ensure high quality of silicon wafers. In this paper, a novel non-destructive method is introduced for measuring the SSD in silicon wafers, the cross-polarisation confocal microscopy. This paper also presents experimental results of using this method to measure the SSD in ground silicon wafers.

Keywords: cross-polarisation confocal microscopy; grinding; manufacturing; damage measurement; nondestructive evaluation; NDE; silicon wafers; subsurface damage; SSD; semiconductor devices; nanomanufacturing.

DOI: 10.1504/IJNM.2006.012198

International Journal of Nanomanufacturing, 2006 Vol.1 No.2, pp.272 - 282

Published online: 28 Jan 2007 *

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