Title: A novel study and research on multilayer AlAs/GaAs quantum dot inner layer for solar cell applications

Authors: H. Victor Du John; D. Jackuline Moni; G. Prabhu Rubesh

Addresses: Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, P.O. Box 641114, Coimbatore, Tamil Nadu, India ' Department of Electronics and Communication Engineering, Karunya Institute of Technology and Sciences, P.O. Box 641114, Coimbatore, Tamil Nadu, India ' Department of Mechanical Engineering, Karunya Institute of Technology and Sciences, P.O. Box 641114, Coimbatore, Tamil Nadu, India

Abstract: Quantum dot solar cell is effectively used in many solar applications to obtain the maximum conversion efficiency. Using materials such as InAs and GaAs or the combination of strained InGaAs/AlGaAs on GaAs substrate provides an improved efficiency. Multi-layer quantum cells provides better energy coupling than other existing models defining the rate equations in terms of their applications in the current research in solar cell applications. The proposed research work addresses the issues present in the earlier solar cell applications by a deep literature survey and then the proposed model is designed using multilayer materials such as AlAs and GaAs quantum dot solar cells. The proposed model provides an improved conversion efficiency of 26.79% and the results are compared for all the available layers.

Keywords: photovoltaic cells; quantum dot; multi junction; solar lattice.

DOI: 10.1504/IJCAET.2021.117135

International Journal of Computer Aided Engineering and Technology, 2021 Vol.15 No.2/3, pp.243 - 256

Received: 24 Sep 2018
Accepted: 07 Dec 2018

Published online: 19 Aug 2021 *

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