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Title: Improved logic performance with semiconducting graphene nano mesh double gate field effect transistor

Authors: Penchalaiah Palla; Hasan Raza Ansari; Gargi Raina; Weiping Wu

Addresses: Centre for Nanotechnology Research, Vellore Institute of Technology, Vellore, Tamil Nadu-632014, India ' Centre for Nanotechnology Research, Vellore Institute of Technology, Vellore, Tamil Nadu-632014, India ' Centre for Nanotechnology Research, Vellore Institute of Technology, Vellore, Tamil Nadu-632014, India ' Centre for Nanotechnology Research, Vellore Institute of Technology, Vellore, Tamil Nadu-632014, India

Abstract: Realisation of field-effect transistors in graphene with an energy gap remains one of the major difficulties for graphene based electronics. One of the solutions to engineer bandgap in graphene is to convert graphene into a graphene nanomesh (GNM).We simulated double gate field-effect transistor with GNM as a channel material underneath an alumina passivation top gate stack, which directly contacts the GNM channel without an inserted buffer layer. With the presence of energy bandgaps, the electronic and transport properties of DG-GNMFET are notably improved, as demonstrated by reduced off-state leakage current, enhanced saturation current, and subthreshold slope. The GNM electrical parameters were extracted by using semi-empirical methods using atomistic tools and the device electrical performance was analysed using the drift-diffusion mode space model. With further advances in bandgap engineering, the GNM based devices may find applications in digital circuits.

Keywords: graphene field-effect transistor; double gate FET; graphene nanomesh; drift-diffusion mode space; band gap engineering; semiconducting graphene; GNM atomistic simulation; GNM digital electronics; device simulation.

DOI: 10.1504/IJNT.2021.116187

International Journal of Nanotechnology, 2021 Vol.18 No.5/6/7/8, pp.751 - 762

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 21 Jun 2021 *

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