Title: Near-zero computing using NCFET for IoT applications

Authors: Kishore Sanapala; S.V.V. Satyanarayana; R. Sakthivel

Addresses: Department of ECE, Marri Laxman Reddy Institute of Technology and Management, Hyderabad, India ' Department of ECE, Sri Vasavi Engineering College, Tadepalligudem, India ' School of Electronics Engineering, Vellore Institute of Technology, Vellore, India

Abstract: The energy consumption of the devices or circuits built on the IoT's is becoming a significant concern with the complementary metal oxide semiconductor (CMOS) technology scaling. To reduce energy consumption, supply voltage (VDD) scaling has proved to be an effective technique with near-threshold/subthreshold computations depicting the endpoint of voltage scaling. This paper discusses how the near-zero computing (NZC) is achieved by scaling the VDD beyond the subthreshold regime using the negative capacitance FET (NCFET) to enable IoT with beyond CMOS features. After characterising the NCFET for near zero operation, the basic computational circuits: logic gates and 1-bitfull adder circuit are designed and simulated using NCFET at near-zero VDD of 0.1 V. In comparison with the CMOS counterparts, the NCFET logic designs have achieved significant improvements and is found that the NCFET logic results in more than 54%, 68%, 85%, and 95% savings in power, delay, energy, and EDP respectively.

Keywords: complementary metal oxide semiconductor; CMOS; energy; internet of thing; IoT; NCFET; near-zero computing; NZC.

DOI: 10.1504/IJIE.2021.114514

International Journal of Intelligent Enterprise, 2021 Vol.8 No.2/3, pp.288 - 295

Accepted: 17 Feb 2020
Published online: 26 Apr 2021 *

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