Title: Performance analysis of surrounding cylindrical gate all around nanowire transistor for biomedical application
Authors: Amit Agarwal; Prashanta Chandra Pradhan; Bibhu Prasad Swain
Addresses: Sikkim Manipal Institute of Technology, Sikkim Manipal University, Gangtok, Sikkim, India ' Sikkim Manipal Institute of Technology, Sikkim Manipal University, Gangtok, Sikkim, India ' Department of Physics, National Institute of Technology, Imphal 795004, Manipur, India
Abstract: This paper proposes a highly sensitive, more accurate, and faster device using silicon on insulator based cylindrical surrounding gate all around nanowire (SCGAA-NW) transistor for biomedical sensor applications and different chemicals present in the blood or environment by setting and analysing proper physical parameters of the device. Different physical parameters, channel material (i.e. SiN, CdS, GaN, ZnO, GaP, Si, GaAs, Ge), oxide material (i.e. SiO2, Si3N4, Al2O3, Er2O3, Y2O3, HfO2, Ta2O5, La2O3), channel radius (1-10 nm), oxide thickness (1-10 nm), the concentration of different material have been employed on the sensor acting as a gate to source voltage, drain to source voltage (−0.5 V to 0.5 V), channel doping (107 to 1014) respectively for the best suitable biomedical application in different environments. Analytical modelling of SCGAA-NW transistor was performed by solving 1-D Poisson's equation, using Gauss law and parabolic approximation method using Matlab simulator.
Keywords: biosensor; bio-medical application; GAA-NW; gate all around nanowire; MOSFET; cylindrical channel; potential at the channel surface.
International Journal of Computer Applications in Technology, 2020 Vol.64 No.4, pp.332 - 338
Received: 11 Mar 2020
Accepted: 09 Apr 2020
Published online: 28 Jan 2021 *