Title: Synergistic effect of DNA interfacing on carbon nanotube field effect transistor devices

Authors: Richa Rastogi; B.D. Pant; Lalit M. Bharadwaj

Addresses: Centre for Nanoscience and Nanotechnology, South Campus, Panjab University, Sector-25, Chandigarh, India ' Smart Sensors Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan, India ' Biomolecular Electronics and Nanotechnology Division, Central Scientific Instruments Organization (CSIO), Sector 30-C, Chandigarh, India; Amity University of Nanotechnology, Noida, Uttar Pradesh, India

Abstract: Successful integration of carbon nanotubes (CNTs) in electronic devices and sensors requires controlled deposition at well defined locations and appropriate electrical contacts to metal electrodes/leads. Controlled self-assembly of CNTs can be achieved by interfacing them with biological molecule like DNA using its self-recognition property. However, these biointerfaces can produce undesirable changes in their device characteristics. Herein, we report an extensive study of effect of DNA interfacing on device characteristics of carbon nanotube field effect transistors and explored its synergistic effects as self-assembling element in future nanodevices. Single walled carbon nanotubes (SWNTs) are interfaced with DNA (via both covalent and non-covalent methodology) and electronic transport properties of corresponding field effect transistor devices have been studied in order to have an insight into changes in the electrical properties of SWNTs after interfacing. It was concluded that covalently linked DNA is not appropriate for self-assembly of carbon nanotubes in future nanodevices as it ruins its electrical characteristics.

Keywords: carbon nanotubes; CNTs; DNA; field effect transistor; FET; transconductance; Schottky barrier.

DOI: 10.1504/IJNBM.2020.112225

International Journal of Nano and Biomaterials, 2020 Vol.9 No.3/4, pp.142 - 170

Received: 09 Sep 2019
Accepted: 15 Apr 2020

Published online: 05 Jan 2021 *

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