Title: A comparative study of lapping and grinding induced surface/subsurface damage of silicon wafers and corresponding polishing efficiency

Authors: Zhiyuan Li; Shang Gao; Renke Kang; Honggang Li; Xiaoguang Guo

Addresses: Key Laboratory for Precision and Non-traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China ' Key Laboratory for Precision and Non-traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China ' Key Laboratory for Precision and Non-traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China ' Key Laboratory for Precision and Non-traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China ' Key Laboratory for Precision and Non-traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China

Abstract: The lapping and grinding induced wafers surface damage layers with the same roughness Ra were compared in terms of surface morphology, surface roughness PV, subsurface damage, material removal mechanism, and material removal rate of later chemical mechanical polishing. The results indicated that surface material on silicon wafer lapped using loose abrasive was removed in brittle mode, and that ground using diamond wheel was removed in both brittle mode and ductile mode. The silicon wafer produced by lapping and grinding had almost the same surface roughness Ra, however, the corresponding surface roughness PV induced by lapping was less than that induced by grinding. When using the chemical mechanical polishing to remove damage layer generated by lapping and grinding, the surface roughness Ra of lapped wafer decreased faster than that of ground wafer, but the material removal rate of lapped wafer was higher than that of ground wafer. Discussion was provided to explore the influence of surface morphology on material removal rate during polishing.

Keywords: silicon wafer; lapping; grinding; chemical mechanical polishing; surface roughness; surface morphology; surface damage; subsurface damage; material removal mechanism; polish efficiency.

DOI: 10.1504/IJAT.2020.109872

International Journal of Abrasive Technology, 2020 Vol.10 No.2, pp.122 - 133

Received: 24 Oct 2019
Accepted: 24 Jun 2020

Published online: 28 Sep 2020 *

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