Title: Modelling of transport properties of graphene field-effect transistor for sensor application

Authors: Geoffrey Ijeomah; Fahmi Samsuri; Mohamad Adzhar Md Zawawi

Addresses: Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang, 26600 UMP Pekan, Pahang, Malaysia ' Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang, 26600 UMP Pekan, Pahang, Malaysia ' School of Electrical and Electronic Engineering, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia

Abstract: A dual-gated ultra-thin graphene field effect transistor (GFET) suitable for electronic sensing application is modelled. The applied simulation approach reproduces accurately the transport properties of the GFET characteristics and enables investigation of the influence of the different physical, biological and chemical factors. The simulation readouts and additional charges in the system are interpreted in the form of current-voltage characteristics and shift in Dirac peaks. These features could be extracted to predict the sensing mechanism of the GFET.

Keywords: graphene; graphene field effect transistor; GFET; sensor; current-voltage characteristics.

DOI: 10.1504/IJBNN.2020.107188

International Journal of Biomedical Nanoscience and Nanotechnology, 2020 Vol.4 No.1/2, pp.105 - 119

Received: 29 Apr 2019
Accepted: 25 Jun 2019
Published online: 07 May 2020 *

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