Authors: Somrita Ghosh; Arindam Biswas; Aritra Acharyya
Addresses: Department of Electronics and Communication Engineering, Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, WB – 712139, India ' Department of Mining Engineering, Kazi Nazrul University, Asansol, Burdwan, WB – 713340, India ' Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, WB – 736170, India
Abstract: The important optoelectronic properties like spectral response, excess noise characteristics, time and frequency response of multiple quantum barrier (MQB) nano-scale avalanche photodiodes (APDs) based on Si~3C-SiC material system have been studied. A self-consistent simulation method based on quantum drift-diffusion model has been presented. Simulation results show that the Si~3C-SiC MQB nano-APDs are capable of detecting significantly longer wavelengths as compared to infrared flat Si APDs. The multiplication gain and excess noise factor (ENF) of the MQB APDs have been calculated by varying the number of quantum barriers (QBs). The numerically calculated ENF values of MQB APDs have been compared with the ENF of Si flat conventional APDs of similar dimensions and it is observed that the use of QBs leads to significant reduction in ENF of the APDs. Simulation results also show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the Si counterparts.
Keywords: avalanche photodiode; APD; multiple quantum barrier; MQB; photocurrent; quantum well; spectral response; excess noise; time and frequency response.
International Journal of Nanoparticles, 2020 Vol.12 No.1/2, pp.73 - 111
Received: 07 Jan 2019
Accepted: 16 Jul 2019
Published online: 20 Mar 2020 *