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Title: A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs

Authors: Shankaranand Jha; Santosh Kumar Choudhary

Addresses: Department of Electronics and Communication Engineering, S R Engineering College, Warangal-506371, India ' Department of Electronics and Communication Engineering, VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad-500090, India

Abstract: The electrical characteristics of metal-oxide semiconductor field-effect transistors (MOSFETs) deteriorate with the scaling of device dimensions. To further the miniaturisation and to have more control over the channel, one of the promising solutions is the multi-gate (MG) architecture of MOSFET. In the present work we have investigated various MG devices like double-gate (DG), tri-gate (TG) and gate-all-around (GAA) MOSFETs by varying their physical parameters and have compared the associated short-channel effects (SCEs). For a specific SCE, a common mathematical expression has been used for all the MOSFET architectures. The analytical results have been found to be in reasonable agreement with the simulated/fabricated devices.

Keywords: multi-gate; MG; double-gate; DG; tri-gate; TG; gate-all-around; GAA; MOSFET; short-channel effects; SCEs; quantum mechanical effect.

DOI: 10.1504/IJNP.2020.106002

International Journal of Nanoparticles, 2020 Vol.12 No.1/2, pp.112 - 121

Received: 28 Jan 2019
Accepted: 10 Jul 2019

Published online: 20 Mar 2020 *

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