Title: Measurement of thermal boundary resistance in ∼10 nm contact using UHV-SThM
Authors: Jaehee Park; Seunghoe Koo; Kyeongtae Kim
Addresses: Department of Mechanical Engineering, Incheon National University, 119, Academy-ro, Yeonsu-gu, Incheon, 22012, South Korea ' Department of Mechanical Engineering, Incheon National University, 119, Academy-ro, Yeonsu-gu, Incheon, 22012, South Korea ' Department of Mechanical Engineering, Incheon National University, 119, Academy-ro, Yeonsu-gu, Incheon, 22012, South Korea
Abstract: Thermal boundary resistance (TBR), which contributes significantly to the determination of thermal networks and heat dissipation at nanoscale, has been studied using various experimental methods, including 3ω method, X-ray deflection, time-domain thermoreflectance (TDTR), and theoretical methods such as diffuse mismatch model (DMM), acoustic mismatch model (AMM) and molecule dynamics (MD). However, the size effect of TBR measurement at the nanoscale has not been done well due to the limitations of general measurement methods. In this study, we propose TBR measurement using ultra-high vacuum scanning thermal microscopy (UHV-SThM), which can investigate the size effect of TBR through heat transfer with nanoscale contacts. The TBRs of Au-Al2O3 (metal/non-metal) and SiO2-Al2O3 (non-metal/non-metal) contacts were measured. The TBR of Au-Al2O3 (metal/non-metal) was measured to be ∼1.3 times larger than that of SiO2-Al2O3 (non-metal/non-metal). This result is analysed by the classical heat transfer model and two temperature model (TTM) including DMM and the electron direct heat transfer. Classical analysis was shown to be contrary to the experimental results, but TTM shows the same trend as the experiment. In particular, the larger experimental results than the TTM are analysed by the size effect of the energy carriers. The TBR measurement method using UHV-SThM is expected to be used actively in study of nanoscale TBR measurement and the size effect of energy carriers.
Keywords: TBR; thermal boundary resistance; UHV-SThM; ultra-high vacuum scanning thermal microscopy; DMM; diffuse mismatch model; nano contact; sensitivity; TTM; two temperature model; interface conductance; contact resistance.
International Journal of Nanotechnology, 2019 Vol.16 No.4/5, pp.263 - 272
Published online: 13 Jan 2020 *Full-text access for editors Access for subscribers Purchase this article Comment on this article