Title: Analysis of 4H-SiC Schottky barrier diode with a comb-shaped field plate

Authors: Dongwoo Bae; Chungbu Jeong; Taewan Kim; Kwangsoo Kim

Addresses: Department of Electronic Engineering, Sogang University, Seoul 121-742, Korea ' Department of Electronic Engineering, Sogang University, Seoul 121-742, Korea ' Department of Electronic Engineering, Sogang University, Seoul 121-742, Korea ' Department of Electronic Engineering, Sogang University, Seoul 121-742, Korea

Abstract: In this study, we have proposed a comb-shaped field plate for use in a 4H-SiC Schottky barrier diode; this field plate was expected to improve the electric field distribution in the device and provide a higher breakdown voltage than conventional field plate structures. The main principle of the proposed structure is to distribute the inner electric field in the blocking mode through a stepped oxide structure formed by several trenches. The proposed structure was optimised using a simulation, and we fabricated and measured a number of devices to evaluate the performance of the proposed structure. The proposed device's breakdown voltage was 39% better than that of a SiC Schottky barrier diode containing conventional field plates.

Keywords: 4H-SiC; wide band gap; power device; trench oxide; edge termination; field plate; FP; electric field crowding; electric field distribution; breakdown voltage; impact ionisation.

DOI: 10.1504/IJPELEC.2019.102508

International Journal of Power Electronics, 2019 Vol.10 No.4, pp.427 - 438

Received: 11 May 2017
Accepted: 04 Sep 2017
Published online: 30 Sep 2019 *

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