Title: Methods for improvement of the consistency and durability of the inorganic memristor structures

Authors: A.I. Vlasov; V.P. Zhalnin; V.A. Shakhnov

Addresses: Department IU-4, Bauman Moscow State Technical University, 2nd Bauman Str., 5, Building 1, 105005, Moscow, Russia ' Department IU-4, Bauman Moscow State Technical University, 2nd Bauman Str., 5, Building 1, 105005, Moscow, Russia ' Department IU-4, Bauman Moscow State Technical University, 2nd Bauman Str., 5, Building 1, 105005, Moscow, Russia

Abstract: The problems of improvement of the consistency of work and the durability of inorganic memristor structures are analysed herein. The mechanisms for operation of memristor structures, materials and the physical principles of their functioning are considered. The promising types of the memristor structure are considered in detail. The causes of inconsistent work are identified, and the authors propose the methods for improvement of the consistency and durability. Based on the analysis of the existing memristor designs and the physicochemical conditions of their operation, methods for improvement of the consistency and durability of the inorganic memristor structures are proposed.

Keywords: memristor; memristor structures; chalcogenides; metal oxides; solid electrolytes; homogeneous membrane.

DOI: 10.1504/IJNT.2019.102405

International Journal of Nanotechnology, 2019 Vol.16 No.1/2/3, pp.187 - 195

Published online: 23 Sep 2019 *

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