Title: Temperature dependence of the states of interface and energy distributions of Au/n-type GaAs Schottky structures

Authors: Yaşar Aslan; Şükrü Karataş

Addresses: Department of Mathematics, Faculty of Sciences and Arts, University of Kahramanmaraş Sütçü Imam, Kahramanmaraş, 46100, Turkey ' Department of Physics, Faculty of Sciences and Arts, University of Kahramanmaraş Sütçü Imam, Kahramanmaraş, 46100, Turkey

Abstract: The purpose of this paper is to characterise states density of interface of Au/n-type contacts of GaAs Schottky over a wide temperature range. Temperature is dependent of the distribution of energy of states density of interface (N_SS) profile calculated by the characteristics of forward bias I-V. The heights of barrier calculated by C⁻²-V plots at high frequency reduced linearly with enhancing temperature. It is found that the mean N_SS enhances with the temperature enhancing. The results present that states densities of interface are very significant parameters that affects the electrical properties of Au/n-GaAs diodes of Schottky.

Keywords: temperature dependence; Au/GaAs structures; interface states density; Schottky contacts.

DOI: 10.1504/IJHM.2019.100770

International Journal of Hydromechatronics, 2019 Vol.2 No.2, pp.112 - 118

Received: 16 Jan 2019
Accepted: 04 Mar 2019
Published online: 17 Jul 2019 *

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