Title: Spintronics for intelligent, low-power, and scalable electronics

Authors: Payal Jangra

Addresses: Department of Electronics and Communication Engineering, Faculty of Engineering and Technology, SGT University, India

Abstract: As traditional semiconductor devices reach their limitations in terms of further scaling and integration, spintronic technologies are emerging as a viable alternative. In contrast to charge-based electronics, spintronic devices utilise the electron's spin, providing distinct benefits in terms of low leakage power, high endurance, non-volatility, and speed in read/write operations. These attributes render them extremely desirable in contrast to CMOS equivalents and well-suited for computing requirements, such as big data and the internet of things (IoT). This article offers a comprehensive overview of spintronics evolution in the last two decades, encompassing the underlying physical phenomena - such as spin-orbit driven effects like the spin hall effect, tunnelling magnetoresistance, and device-level applications, including spin valves and spin logic circuits. In addition, the article describes the present status of spintronic research and offers a vision on its future trajectory, highlighting the significance of spintronics to drive next-generation computing and memory technologies.

Keywords: magnetic tunnel junction; MTJ; spin hall effect; SHE; spin-orbit torque; SOT; non-volatile memories; NVM; spin-transfer torque; STT; racetrack memory; RM; internet of things; IoT.

DOI: 10.1504/IJESMS.2026.155150

International Journal of Engineering Systems Modelling and Simulation, 2026 Vol.17 No.4, pp.210 - 223

Accepted: 06 Feb 2025
Published online: 28 Jul 2026 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article