Title: Percussion drilling of P-type silicon wafer using a CO₂ microsecond pulsed laser

Authors: Asif Ahmed; Rajeev Nair

Addresses: Department of Mechanical Engineering, Wichita State University, 1845 Fairmount Street, Wichita 67260, KS, USA ' Department of Mechanical Engineering, Wichita State University, 1845 Fairmount Street, Wichita 67260, KS, USA

Abstract: Laser manufacturing of silicone has become a valuable research topic due to its higher level of efficiency and rapidly increasing interest in the electronics and photovoltaic industry. Different types of lasers with varying pulse width (ranging from micro to femtoseconds) and laser parameters like frequency, power/duty cycle, pulse width, and wavelength have been used. Severe thermal damage could occur on the wafer if imprudent parameters are used. In this study, an industrial CO₂ pulsed laser with a wavelength of 10.6 μm was used to drill single crystal silicon wafers with a thickness of 280 μm. The hole entrance diameter, exit diameter, and spatter deposition around the entrance were characterised using an optical profilometer. The process performance was analysed towards optimisation of hole quality. The critical parameters were power, duty cycle, pulse duration, and preheating temperature that had a major effect on hole diameter and the overall hole appearance. [Submitted 6 March 2025; Accepted 20 November 2025]

Keywords: percussion drilling; pulsed laser; silicon wafer; profilometer; kerf width.

DOI: 10.1504/IJMR.2026.154547

International Journal of Manufacturing Research, 2026 Vol.20 No.2, pp.173 - 192

Received: 06 Mar 2025
Accepted: 20 Nov 2025
Published online: 03 Jul 2026 *

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