Article: A high precision voltage mode band gap reference circuit for receiver front-end Journal: International Journal of Power Electronics (IJPELEC) 2026 Vol.22 No.2 pp.111 - 140 Abstract: The receiver front-end use the band gap reference (BGR) circuit, however, the requirement of high power, sensitivity, complexity design and dynamic range are considered as the difficulties in the system. Therefore, the bipolar junction transistor (BJT) is added to the proportional to absolute temperature (PTAT) generator cell to tackle the difficulties in the system and to attain a high KI factor. Specifically, the first and second-order temperature dependence terms are mutually compensated to compensate the temperature coefficients VREF. The length of the transistors is used to minimise the process variation effects and mismatches, which used to reduce power consumption by adding the bipolar transistors. The construction of the BGR circuit is made by the start-up circuit, complementary to absolute temperature (CTAT) and PTAT generator cell, which maintains the stable output even in the presence of transient response. The maximum reference voltage is attained at the range of 1.2 V. Inderscience Publishers - linking academia, business and industry through research

Title: A high precision voltage mode band gap reference circuit for receiver front-end

Authors: S. Mohan Das; B. Shereesha; Pasupula Mallikarjuna; G. Rajyalakshmi; Shaik Mallika

Addresses: Department of Electronics and Communication Engineering, SVR Engineering College, Nandyal, India ' Department of Electronics and Communication Engineering, SVR Engineering College, Nandyal, India ' Department of Electronics and Communication Engineering, SVR Engineering College, Nandyal, India ' Department of Electronics and Communication Engineering, SVR Engineering College, Nandyal, India ' Department of Electronics and Communication Engineering, SVR Engineering College, Nandyal, India

Abstract: The receiver front-end use the band gap reference (BGR) circuit, however, the requirement of high power, sensitivity, complexity design and dynamic range are considered as the difficulties in the system. Therefore, the bipolar junction transistor (BJT) is added to the proportional to absolute temperature (PTAT) generator cell to tackle the difficulties in the system and to attain a high K_I factor. Specifically, the first and second-order temperature dependence terms are mutually compensated to compensate the temperature coefficients V_REF. The length of the transistors is used to minimise the process variation effects and mismatches, which used to reduce power consumption by adding the bipolar transistors. The construction of the BGR circuit is made by the start-up circuit, complementary to absolute temperature (CTAT) and PTAT generator cell, which maintains the stable output even in the presence of transient response. The maximum reference voltage is attained at the range of 1.2 V.

Keywords: bandgap reference circuit; receiver front-end transceivers; reference voltage; generator cell; temperature coefficients.

DOI: 10.1504/IJPELEC.2026.152433

International Journal of Power Electronics, 2026 Vol.22 No.2, pp.111 - 140

Received: 25 Oct 2024
Accepted: 03 May 2025
Published online: 19 Mar 2026 *

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Title: A high precision voltage mode band gap reference circuit for receiver front-end

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