Title: Nanostructured thin films of Ba doped In₂O₃ for selectively monitoring trace levels of NO_x

Authors: Chander Shekhar, K.I. Gnanasekar, E. Prabhu, V. Jayaraman, T. Gnanasekaran

Addresses: Liquid Metals and Structural Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India. ' Liquid Metals and Structural Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India. ' Liquid Metals and Structural Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India. ' Liquid Metals and Structural Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India. ' Liquid Metals and Structural Chemistry Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India

Abstract: Nanostructured thin films of Ba-doped indium oxide have been examined for monitoring ppm levels of NO_x in ambient air, and their response patterns have been recorded at different operating conditions. These films are found to be capable of sensing down to 0.5 ppm NO_x concentration in air. The optimum operating temperature for sensing is found to be 300°C. Response and retrace times are typically 60 s and 300 s respectively. They are highly selective to NO_x and do not show significant response to hydrogen and petroleum gas up to 5000 ppm.

Keywords: NOx sensing; In2O3 thin films; pulsed laser deposition; nitrogen oxides; nanostructures; nanotechnology; indium oxide; nitric oxide; nitrogen dioxide; barium; NOx monitoring.

DOI: 10.1504/IJNT.2010.034708

International Journal of Nanotechnology, 2010 Vol.7 No.9/10/11/12, pp.1038 - 1046

Published online: 17 Aug 2010 *

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